MIL-PRF-49464 Capacitors, Chip, Single Layer, Fixed, Parallel Plate, Ceramic Dielectric, Established Reliability, General Specification ForThis specification covers the general requirements for ceramic plate, single layer capacitors. These capacitors are intended for stripline or microstrip applications, usually at frequencies of 1 GHz and higher. Capacitors covered by this specification have failure rate levels \(FRL\) ranging from 1.0 to 0.001 percent per 1,000 hours. These failure rate levels are established at a 90-percent confidence level and maintained at a 10-percent producer\'s risk. They are based on life tests performed at a maximum rated voltage at maximum rated temperature. An acceleration factor of 8:1 has been used to relate life test data obtained at 200 percent of rated voltage at maximum rated temperature, to rated voltage at rated temperature. Statistical Process Control \(SPC\) techniques are required in the manufacturing process to minimize variation in production of capacitors supplied to the requirements of this specification.

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MIL-PRF-49464C

3.7 Capacitance. When measured as specified in 4.8.4, the capacitance shall be within the specified tolerance

3.8 Dissipation factor. When determined as specified in 4.8.5, the dissipation factor for capacitors of 4.7 pF or

greater shall not exceed:

Symbol F and G characteristics:

0.15 percent

Symbol W: 50 and 100 volts

2.5 percent

Symbol W: 16 and 25 volts

3.5 percent

3.9 Insulation resistance. When measured as specified in 4.8.6, the insulation resistance at +25�C shall be not

less than 10 megohms. At +125�C it should not be less than 10 megohms.

3.10 Dielectric withstanding voltage. When capacitors are tested as specified in 4.8.7, there shall be no evidence

of breakdown or visible evidence of arcing or damage.

3.11 Bond strength. When tested as specified in 4.8.8, bond strength shall be at least 3.0 grams force, and there

shall be no fracturing of the bond at the wire to electrode interface or separation of the electrode from the dielectric.

3.12 Die shear strength. When tested as specified in 4.8.9, parts shall not shear from their mountings within the

gram force limits specified.

3.13 Temperature coefficient limits. When capacitors are tested as specified in 4.8.10, the capacitance change

shall not exceed the limits specified in table I.

3.14 Immersion. When tested as specified in 4.8.11, capacitors shall meet the following requirements:

a. Visual examination: No mechanical damage.

b. Dielectric withstanding voltage: As specified in 3.10.

c. Insulation resistance (+25�C): Not less than 30 percent of the initial requirement (see 3.9).

d. Capacitance change:

(1) Symbols F and G: Shall change not more than 0.5 percent of the nominal value or 0.5 pF, whichever is

greater, from the initial value.

(2) Symbol W: Shall change not more than �10 percent from the initial measured value.

e. Dissipation factor: Shall be as specified in 3.8.

3.15 Humidity, steady state, low voltage. When tested as specified in 4.8.12, capacitors shall meet the following

requirements:

a. Visual examination: No mechanical damage.

b. Insulation resistance (+25�C): Shall meet the initial +25�C requirement (see 3.9).

c. Capacitance change:

(1) Symbols F and G: Shall change not more than 0.5 percent of the nominal value or 0.5 pF from the initial

value, whichever is greater.

(2) Symbol W: Shall change not more than �10 percent from the initial measured value.